The Application of Differential Hall Effect Continuous Anodic Oxidation Technique for Ultra Shallow Structures

被引：1
|
作者：
Prussin, S. [1 ]
Reyes, J. [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
ANALYTICAL TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND PROCESS CHARACTERIZATION 6 (ALTECH 2009) | 2009年 / 25卷 / 03期
关键词：
DOPANT DENSITY RELATIONSHIP;
D O I：
10.1149/1.3204401
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The differential Hall effect CAOT permits rapid, accurate measurements of mobility, resistivity, and carrier concentration. This permits us to extract defect scattering contributions to the mobility for comparison of doping and annealing techniques. The co-implantation of C with P was evaluated and showed that besides restricting the diffusion of P, the carrier concentration was significantly reduced. The application of DHE CAOT to the evaluation of doped polysilicon films permitted the evaluation of carrier concentration and mobility profiles. The latter has been correlated to grain size.
引用
收藏
页码：139 / 150
页数：12
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