Anodic Oxidation of Ultra-Thin Ti Layers on ITO Substrates and their Application in Organic Electronic Memory Elements

被引：12
|
作者：
Heljo, P. S. [1 ]
Wolff, K. [1 ]
Lahtonen, K. [2 ]
Valden, M. [2 ]
Berger, P. R. [3 ]
Majumdar, H. S. [4 ]
Lupo, D. [1 ]
机构：
[1] Tampere Univ Technol, Dept Elect & Commun Engn, Printed & Organ Elect Grp, FIN-33101 Tampere, Finland
[2] Tampere Univ Technol, Optoelect Res Ctr, Surface Sci Lab, FIN-33101 Tampere, Finland
[3] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[4] VTT Tech Res Ctr Finland, Espoo 02150, Finland
来源：
ELECTROCHIMICA ACTA | 2014年 / 137卷
基金：
芬兰科学院; 美国国家科学基金会;
关键词：
Anodic oxidation; Ultra-thin oxide; Defect density analysis; Negative differential resistance; NEGATIVE DIFFERENTIAL RESISTANCE; FILMS; ANODIZATION; FABRICATION; NANOTUBES; COATINGS;
D O I：
10.1016/j.electacta.2014.05.157
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：91 / 98
页数：8
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