Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm

被引：52
|
作者：
Lackner, D. [1 ]
Pitts, O. J. [1 ]
Steger, M. [1 ]
Yang, A. [1 ]
Thewalt, M. L. W. [1 ]
Watkins, S. P. [1 ]
机构：
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 08期
基金：
加拿大自然科学与工程研究理事会;
关键词：
III-V semiconductors; indium compounds; infrared detectors; MOCVD; photodetectors; photoluminescence; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; INAS; MAGNETOPHOTOLUMINESCENCE;
D O I：
10.1063/1.3216041
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the growth and optical characterization of InAsSb/InAs strain balanced superlattice structures on GaSb substrates for potential application in midinfrared photodetectors. Photoluminescence (PL) emission was observed in the range 5 mu m <lambda < 10 mu m at 4 K for Sb compositions 0.14 < x(Sb)< 0.27. The PL energy was found to depend approximately linearly on antimony, consistent with a type II band lineup. The dependence of the emission energies on the Sb mole fraction is in agreement with trends predicted by various theoretical works. The data suggest that this transition reaches zero energy for a composition of x(Sb)=0.37.
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页数：3
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