20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs

被引：6
|
作者：
Hurm, V
Benz, W
Bronner, W
Fink, T
Kaufel, G
Kohler, K
Lao, Z
Ludwig, M
Raynor, B
Rosenzweig, J
Schlechtweg, M
Windscheif, J
机构：
[1] Fraunhofer Inst. Appl. Solid S., D-79108 Freiburg
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 07期
关键词：
integrated optoelectronics; optical receivers;
D O I：
10.1049/el:19970379
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first 20Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using AlGaAs/GaAs HEMTs. At a wavelength of 1.3 mu m, the integrated InGaAs MSM photodiode has a responsivity of 0.32A/W and the photoreceiver has a -3dB bandwidth of 16.5GHz. Clearly-opened eye diagrams for a 20Gbit/s 1.5 mu m optical data stream have been demonstrated.
引用
收藏
页码：624 / 626
页数：3
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