Spin relaxation of conduction electrons in bulk III-V semiconductors

被引：0
|
作者：
Song, PH [1 ]
Kim, KW [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
PHYSICAL REVIEW B | 2002年 / 66卷 / 03期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs, and InSb of both n and p type. The relative importance of each spin relaxation mechanism is compared, and diagrams showing the dominant mechanism are constructed as a function of the temperature and impurity concentration. Our approach is based upon theoretical calculations of the momentum relaxation rate, and allows one to understand the interplay between various factors affecting the spin relaxation over a broad range of temperature and impurity concentration.
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页数：8
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