Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN

被引：2

作者：

Schmidt, Gordon ^{[1
]}

Veit, Peter ^{[1
]}

Wieneke, Matthias ^{[1
]}

Bertram, Frank ^{[1
]}

Dadgar, Armin ^{[1
]}

Krost, Alois ^{[1
]}

Christen, Juergen ^{[1
]}

机构：

[1] Univ Magdeburg, Inst Expt Phys, Univ Pl 2, D-39106 Magdeburg, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 01期

关键词：

basal plane stacking fault; cathodoluminescence; GaN; partial dislocations; GALLIUM NITRIDE; LUMINESCENCE; MICROSCOPY; DEFECTS;

D O I：

10.1002/pssb.201552451

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In GaN, the basal plane stacking fault type I-1 is a two-dimensional defect characterized by a cubic inclusion within the wurtzite structure. Excitons are bound at the BSF I-1 similar to the localization in a quantum well heterostructure leading to an efficient radiative recombination. In this study, we present the optical and structural properties of basal plane stacking faults occurrent in silicon doped a-plane GaN layer by means of highly spatially resolved cathodoluminescence spectroscopy performed in a scanning transmission electron microscope. Drastically reduced panchromatic intensity in the vicinity of partial dislocations terminating the stacking faults, points to their non-radiative character. Originating from intersection of two-dimensional defects, the emission at 379.6 nm could be attributed to optically active stair-rod dislocations. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：73 / 77

页数：5

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