Structural properties of bulk GaN substrates: Impact of structural anisotropy on non-polar and semi-polar crystals

被引：2

作者：

Serafinczuk, Jaroslaw ^{[1
]}

Kucharski, Robert ^{[2
]}

Zajac, Marcin ^{[2
]}

Gotszalk, Teodor Pawel ^{[1
]}

Kudrawiec, Robert ^{[3
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

[2] Ammono SA, PL-00493 Warsaw, Poland

[3] Wroclaw Univ Technol, Fac Fundamental Problems Technol, PL-50370 Wroclaw, Poland

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2015年 / 50卷 / 11期

关键词：

GaN; XRD; structural anisotropy; AMMONOTHERMAL GROWTH; PRESSURE SOLUTION; FILMS; HVPE;

D O I：

10.1002/crat.201500125

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper we show the structural parameters and structural anisotropy of the bulk GaN substrates of various crystallographic orientations (00.1), (10.0), (11.0) and (20.1) obtained by ammonothermal method. The structural parameters were investigated using high resolution X-Ray Diffraction. Perfect crystalline structure manifests in very narrow peaks in X-ray rocking curves. The full width at half maximum (FWHM) values of 16 and 18 arcsec for the symmetrical and asymmetrical peaks, respectively, have been observed. In addition, we observed structural anisotropy in the non-polar and semi-polar crystals, depending on the orientation of the sample relative to the X-ray beam. It is conducted that this anisotropy is a intrinsic property of nonpolar and semi-polar GaN substrates.

引用

页码：903 / 908

页数：6

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