An injection-locked power oscillator in 0.35 m SiGe BiCMOS process for power amplifier driver

被引：0

作者：

Lee, Ho-Chang ^{[1
]}

Jang, Sheng-Lyang ^{[1
]}

Chiou, Ji-Shin ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2018年 / 60卷 / 06期

关键词：

cascode power amplifier (PA); injection-locked power amplifier; 0.35 mu m SiGe BiCMOS; TRANSMITTER;

D O I：

10.1002/mop.31183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we present an injection-locked power amplifier (ILPA) suitable for 7-GHz applications. The ILPA uses cascode SiGe HBT amplifier and was fabricated in the 0.35 m 3P3M BiCMOS process for high supply voltage operation. The free-running oscillation of the ILPA is around 7 GHz. The locking range is 2.4 GHz from 6.8 to 9.2 GHz. The output power from the buffer is 5.07 dBm at the ILFP-core supply 3 V and it increases with the ILFP-core supply voltage.

引用

页码：1515 / 1519

页数：5

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