The recombination and tunnel current in GaAs-based solar cells: Effect of radiation

被引：0
|
作者：
Kalinovsky, VS [1 ]
Andreev, VM [1 ]
Evstropov, VV [1 ]
Khvostikov, VP [1 ]
Lantratov, VM [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The space charge (depletion) region of photovoltaic and tunnel p-n junctions, as appeared, give an essential contribution to the characteristics of multi-cascade solar cells and to their radiation tolerance. In the present work the mechanisms of current passage in GaAs p-n junctions and their evolution under irradiation with 6.78 MeV protons, 1MeV electrons and gamma-rays from a Co-60 source have been studied. The recombination component of the photovoltaic p(+)-n junctions yields the carrier lifetimes in the SCR tau(w) = (10(-10) divided by 10(-8))s. Estimates of the damage coefficient in the SCR - K-tauw based on an analysis of the dependence of the carrier lifetime in the SCR on the irradiation fluences demonstrated that the damage coefficient is fluence dependent.
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页码：765 / 768
页数：4
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