The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering

被引：14
|
作者：
Najwa, S. [1 ]
Shuhaimi, A. [1 ]
Ameera, N. [1 ]
Hakim, K. M. [1 ]
Sobri, M. [1 ]
Mazwan, M. [1 ]
Mamat, M. H. [2 ]
Yusnizam, Y. [1 ]
Ganesh, V. [1 ]
Rusop, M. [2 ]
机构：
[1] Univ Malaya, Fac Sci, Low Dimens Mat Res Ctr, Dept Phys, Kuala Lumpur 50603, Malaysia
[2] Univ Teknol MARA UiTM, Fac Elect Engn, NANO ElecTron Ctr, Shah Alam 40450, Selangor, Malaysia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2014年 / 72卷
关键词：
Indium tin oxide; RF magnetron sputtering; Nanocolumns; ITO THIN-FILMS; GROWTH;
D O I：
10.1016/j.spmi.2014.03.023
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In the present study, transparent conductive indium tin oxide (ITO) nanocolumns are successfully deposited on glass and silicon substrates by radio frequency (RF) magnetron sputtering system. The effects of sputtering pressure on the morphological, structural, electrical and optical properties of the ITO nanocolumns were investigated. Dense nanocolumns array are obtained at low sputtering pressure. The (400) peaks become more intense at low sputtering pressure, which indicates the improvement in the crystallinity of the ITO nanocolumns. The lowest resistivity of 9.36 x 10(-5) Omega cm was obtained for the ITO nanocolumns deposited at sputtering pressure of 3 mTorr. The average of optical transparency greater than 80% in the visible range of 470 nm was obtained from all samples investigated, give a good potential for blue light emitting diode (LED) applications. The low resistivity and high transparencies give a superior properties as a transparent conducting layer in various optoelectronic devices comparable with that conventional ITO conducting layer. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：140 / 147
页数：8
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