Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

被引：16
|
作者：
Wu, Yan [1 ]
Ji, Lingfei [1 ]
Lin, Zhenyuan [1 ]
Jiang, Yijian [1 ]
Zhai, Tianrui [2 ]
机构：
[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
[2] Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 04期
基金：
中国国家自然科学基金; 北京市自然科学基金;
关键词：
LUMINESCENCE PROPERTIES; SILICON-CARBIDE; NANOCRYSTALS; NANOWIRES; EMISSION; GRAPHENE; SI;
D O I：
10.1063/1.4863437
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Blue photoluminescence (PL) of 6H-SiC irradiated by an ultraviolet laser can be observed at room temperature in dark condition. PL spectra with Gaussian fitting curve of the irradiated SiC show that blue luminescence band (similar to 440 nm) is more pronounced than other bands. The blue PL enhancement is the combined result of the improved shallow N-donor energy level and the unique surface state with Si nanocrystals and graphene/Si composite due to the effect of photon energy input by the short-wavelength laser irradiation. The study can provide a promising route towards the preparation of well-controlled blue photoluminescence material for light-emitting devices. (C) 2014 AIP Publishing LLC.
引用
下载
收藏
页数：4
相关论文
共 50 条
  • [31] Photoluminescence of 6H-SiC nanostructures fabricated by electrochemical etching
    Botsoa, J.
    Bluet, J. M.
    Lysenko, V.
    Marty, O.
    Barbier, D.
    Guillot, G.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
  • [32] Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
    Edmond, John A.
    Kong, Hua-Shuang
    Carter Jr., Calvin H.
    Physica B: Condensed Matter, 1993, 185 (1-4): : 453 - 460
  • [33] BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC
    EDMOND, JA
    KONG, HS
    CARTER, CH
    PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) : 453 - 460
  • [34] Observation of metastable defect in electron irradiated 6H-SiC
    Hemmingsson, CG
    Son, NT
    Kordina, O
    Lindstrom, JL
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 561 - 564
  • [35] Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC
    Thomas, P
    Contreras, S
    Juillaguet, S
    Robert, JL
    Camassel, J
    Gimbert, J
    Billon, T
    Jaussaud, C
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 725 - 728
  • [36] Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC
    Cent Natl de la Recherche, Scientifique, Montpellier, France
    Mater Sci Forum, pt 2 (725-728):
  • [37] Temperature dependence of the photoluminescence decay time in thin GaN layers on 6H-SiC(0001)
    Grahn, H
    Ringling, J
    Brandt, O
    Yang, B
    Ploog, K
    Off, J
    Scholz, F
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 202 - 205
  • [38] Room Temperature Coherent Spin Alignment of Silicon Vacancies in 4H- and 6H-SiC
    Soltamov, Victor A.
    Soltamova, Alexandra A.
    Baranov, Pavel G.
    Proskuryakov, Ivan I.
    PHYSICAL REVIEW LETTERS, 2012, 108 (21)
  • [39] Low Temperature Relaxation Properties of SHI Irradiated N-doped 6H-SiC
    Viswanathan, E.
    Murugaraj, R.
    Selvakumar, S.
    Sankar, S.
    Kanjilal, D.
    Sivaji, K.
    SOLID STATE PHYSICS, PTS 1 AND 2, 2012, 1447 : 927 - +
  • [40] Low temperature dielectric study on swift heavy ion irradiated 6H-SiC crystals
    Viswanathan, E.
    Murugaraj, R.
    Sankar, S.
    Arulchakkaravarthi, A.
    Kanjilal, D.
    Sivaji, K.
    TRANSACTIONS OF THE INDIAN INSTITUTE OF METALS, 2011, 64 (03) : 305 - 308
12345