Influence of laser irradiation on Hg1-xMnxTe photoelectrical properties

被引:0
|
作者
Kopishynskaya, EP
Mozol, PE
Rarenko, IM
Vlasenko, AI
机构
关键词
laser; photoconductivity; recombination; lifetime; Hg(1-x)MnxTe;
D O I
10.1117/12.280455
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have carried out experimental investigation of spectral and temperature dependences of photoconductivity in n-type Hg1-xMnxTe (x = 0.1) and studied an influence of nanosecond pulses of ruby laser irradiation on such properties. It has been shown that irrdiation of the samples with sub-threshold energy densities (E much less than E-th = 0.18 J/cm(2)) does not cause a change of their photosensitivity and leads to the surface refining from impurity atoms and oxides, A laser treatment, of the samples with energy densities E > E-th stimulates a rise of the defect number in the crystals that causes a change of the lifetime characteristics and photosensitivity lowering.
引用
收藏
页码:336 / 339
页数:4
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