Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot

被引：10

作者：

Vdovin, E. E. ^{[1
,2
]}

Makarovsky, O. ^{[1
]}

Patane, A. ^{[1
]}

Eaves, L. ^{[1
]}

Khanin, Yu. N. ^{[2
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] RAS, Inst Microelect Technol, Chernogolovka 142432, Russia

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

photoexcitation; resonant tunnelling diodes; semiconductor quantum dots; FIELD-EFFECT TRANSISTOR;

D O I：

10.1103/PhysRevB.79.193311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes lowers the electrostatic energy of the quantum dot state and switches the current-carrying channel from fully open to fully closed with a high on/off ratio (>50). The device can be reset by means of a bias voltage pulse. These properties are of interest for charge-sensitive photon counting devices.

引用

页数：4

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