Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

被引：155

作者：

Fischer, AJ ^{[1
]}

Allerman, AA ^{[1
]}

Crawford, MH ^{[1
]}

Bogart, KHA ^{[1
]}

Lee, SR ^{[1
]}

Kaplar, RJ ^{[1
]}

Chow, WW ^{[1
]}

Kurtz, SR ^{[1
]}

Fullmer, KW ^{[1
]}

Figiel, JJ ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

关键词：

D O I：

10.1063/1.1728307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet light-emitting diodes (LEDs) have been grown by metalorganic vapor phase epitaxy using AlN nucleation layers and thick n-type Al0.48Ga0.52N current spreading layers. The active region is composed of three Al0.36Ga0.64N quantum wells with Al0.48Ga0.52N barriers for emission at 290 nm. Devices were designed as bottom emitters and flip-chip bonded to thermally conductive submounts using an interdigitated contact geometry. The ratio of quantum well emission to 330 nm sub-band gap emission is as high as 125:1 for these LEDs. Output power as high as 1.34 mW at 300 mA under direct current operation has been demonstrated with a forward voltage of 9.4 V. A peak external quantum efficiency of 0.18% has been measured at an operating current of 55 mA. (C) 2004 American Institute of Physics.

引用

页码：3394 / 3396

页数：3

共 50 条

[1] Room-temperature SiGe light-emitting diodes
Vescan, L
Stoica, T
[J]. JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 485 - 489
[2] Room-temperature SiGe light-emitting diodes
Vescan, L
Stoica, T
[J]. LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 485 - 489
[3] Room-temperature light-emitting diodes with Ge islands
Vescan, L
Chretien, O
Stoica, T
Mateeva, E
Mück, A
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2000, 3 (5-6) : 383 - 387
[4] Chiral perovskites for room-temperature spin light-emitting diodes
Su, Wen
Yuan, Fanglong
[J]. SCIENCE BULLETIN, 2022, 67 (15) : 1535 - 1538
[5] Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
Zhang, JP
Chitnis, A
Adivarahan, V
Wu, S
Mandavilli, V
Pachipulusu, R
Shatalov, M
Simin, G
Yang, JW
Khan, MA
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (26) : 4910 - 4912
[6] Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
Sun, Xiaochen
Liu, Jifeng
Kimerling, Lionel C.
Michel, Jurgen
[J]. OPTICS LETTERS, 2009, 34 (08) : 1198 - 1200
[7] Room-temperature 340 nm ultraviolet electroluminescence from ZnS-based light-emitting diodes
Nakamura, S
Yamada, Y
Taguchi, T
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 1091 - 1095
[8] Room-temperature silicon light-emitting diodes based on dislocation luminescence
Kveder, V
Badylevich, M
Steinman, E
Izotov, A
Seibt, M
Schröter, W
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (12) : 2106 - 2108
[9] 10 milliwatt pulse operation of 265 nm AlGaN light emitting diodes
Bilenko, Y
Lunev, A
Hu, XH
Deng, JY
Katona, TM
Zhang, JP
Gaska, R
Shur, MS
Sun, WH
Adivarahan, V
Shatalov, M
Khan, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7): : L98 - L100
[10] Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si
Oehme, M.
Werner, J.
Gollhofer, M.
Schmid, M.
Kaschel, M.
Kasper, E.
Schulze, J.
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (23) : 1751 - 1753

← 1 2 3 4 5 →