Room-temperature SiGe light-emitting diodes

被引：19
|
作者：
Vescan, L
Stoica, T
机构：
[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany
[2] Natl Inst Mat Phys, Bucharest, Romania
来源：
JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期
关键词：
SiGe; light-emitting diode; infrared; strained SiGe; island; LPCVD;
D O I：
10.1016/S0022-2313(98)00160-4
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In the present paper the electroluminescence of PIN diodes with either strained SiGe/Si or Ge islands in the i-region has been investigated experimentally and by quantitative modelling. The modelling helped to improve the diode structure. Consequently, diodes with strained Si(0.80)Ge(0.20) could be improved so as to reveal emission up to room temperature, if the thickness was high enough. To overcome the thickness limitation due to plastic relaxation, we used selective epitaxy on small areas. We also present results for diodes with Ge islands in the active region. The internal quantum efficiency of light emitting diodes with strained SiGe was at room temperature similar to 10(-4), while diodes with islands emitted ten times less light. (C) 1999 Elsevier Science B.V. AII rights reserved.
引用
收藏
页码：485 / 489
页数：5
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