Characterization of Al2O3 thin films of GaAs substrate grown by atomic layer deposition

被引：0
|
作者：
Lu, Hong-Liang [1 ]
Li, Yan-Bo
Xu, Min
Ding, Shi-Jin
Sun, Liang
Zhang, Wei
Wang, Li-Kang
机构：
[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Hebei Univ, Coll Elect & Infomat Engn, Baoding 071002, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300 degrees C. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and x-ray photoelectron spectroscopy (XPS). the XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3 nm and 0.5 nm, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from Al2O3.
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页码：1929 / 1931
页数：3
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