XPS characterization of Al2O3/ZnO ultrathin films grown by atomic layer deposition

被引：1

作者：

Ghods, Amirhossein ^{[1
]}

Zhou, Chuanle ^{[1
]}

Ferguson, Ian T. ^{[1
,2
]}

机构：

[1] Missouri Univ Sci & Technol, Elect & Comp Engn, Rolla, MO 65409 USA

[2] Kennesaw State Univ, Southern Polytech Coll Engn & Engn Technol, Marietta, GA 30060 USA

来源：

SURFACE SCIENCE SPECTRA | 2020年 / 27卷 / 02期

关键词：

Al2O3; ZnO; ultrathin film growth; atomic layer deposition; x-ray photoelectron spectroscopy; near-surface elemental analysis; SURFACE PASSIVATION; RECOMBINATION;

D O I：

10.1116/6.0000585

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The near-surface compositional properties of double-layer Al2O3/ZnO ultrathin films, grown on the n-type GaAs substrate using the atomic layer deposition (ALD) technique, are analyzed by means of high-resolution x-ray photoelectron spectroscopy (XPS). This structure has been used as the dielectric or the passivation layer in microelectronic devices, such as metal-oxide-semiconductor (MOS) capacitors, field-effect transistors, and Schottky junctions. The XPS spectra of double-layer Al2O3/ZnO thin films were obtained using monochromatic Al k(alpha) monochromatic radiation at 1486.6 eV and included an overall survey scan, in addition to the high-resolution spectra of Zn 2p, Al 2p, O 1s, Ga 2p, and As 3d.

引用

页数：8

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