Gain bandwidth considerations in fully integrated distributed amplifiers implemented in silicon

被引：0
|
作者：
Amaya, RE [1 ]
Aguirre, J [1 ]
Plett, C [1 ]
机构：
[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
来源：
2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 4, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A study of the gain and bandwidth limitations of a distributed amplifier implemented in silicon substrates is presented. It was found that the gain bandwidth product is limited to approximately 55% of the f(max) of the gain stage used. This study considered three commonly used gain stages in a distributed amplifier: single device, cascode and darlington f(T) doubler. A limit on the bandwidth for the distributed amplifier is presented as a function of the choice of gain cell, quality of the passives, and the number of stages used. Gain and matching considerations are also presented. Measurements of three distributed amplifiers verify the simulation results.
引用
收藏
页码：273 / 276
页数：4
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