A study on MOSFET rectifiers with transistors operating in the weak inversion region

被引:0
|
作者
Goncalves, Hugo [1 ]
Martins, Miguel [1 ]
Fernandes, Jorge [1 ]
机构
[1] Univ Tecn Lisboa, Inst Super Tecn, ID, INESC, Lisbon, Portugal
关键词
SENSOR;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Today's energy harvesting circuits have to harvest energy from very weak sources demanding high sensitivity and high efficiency. In this paper it is presented a study on rectifiers used in radio frequency (RF) energy harvesting systems with transistors operating in weak-inversion region, where the losses due to reverse current become comparable to the direct (or charge) current. The study compares three rectifier topologies and makes use of all transistors terminals to improve performance, increasing the direct current and reducing the reverse current. The results show that connecting an anti-phase signal to the transistor's gate and bulk terminals improves the rectifier's delivered power.
引用
收藏
页码:665 / 668
页数:4
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