TEMPERATURE-DEPENDENCE OF MOSFET CHARACTERISTICS IN WEAK INVERSION

被引：8
|
作者：
NISHIDA, M [1 ]
OHYABU, H [1 ]
机构：
[1] TOKYO SANYO ELECT CO LTD,ORA GUN,GUMMA,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 10期
关键词：
D O I：
10.1109/T-ED.1977.18987
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1245 / 1248
页数：4
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