Preparation of AgInSe2 thin films grown by vacuum evaporation method

被引：15
|
作者：
Matsuo, H. [1 ]
Yoshino, K. [1 ]
Ikari, T. [1 ]
机构：
[1] Miyazaki Univ, Dept Elect & Elect Engn, 1-1 Gakuen Kibanadainishi, Miyazaki 8892192, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8 | 2006年 / 3卷 / 08期
关键词：
D O I：
10.1002/pssc.200669511
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline AgInSe2 thin films were successfully grown on glass substrates by an evaporation method. The starting materials were stoichiometrically mixed Ag2Se and In2Se3 powders. X-ray diffraction revealed that the sample annealed at 600 degrees C consisted of AgInSe2 single phase, with (112) orientation and a large grain size. The lattice constant (a axis) was close to JCPDS values. From optical transmittance and reflectance measurements, the bandgap energy was estimated to be 1.17 eV. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2644 / +
页数：2
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