Preparation of copper sulfide thin Layers by a single-source MOCVD process

被引：55
|
作者：
Nomura, R [1 ]
Miyawaki, K [1 ]
Toyosaki, T [1 ]
Matsuda, H [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN,DEPT APPL CHEM,SUITA,OSAKA 565,JAPAN
来源：
CHEMICAL VAPOR DEPOSITION | 1996年 / 2卷 / 05期
关键词：
D O I：
10.1002/cvde.19960020504
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Communication: Metal dithiocarbamate complexes are also potential candidates for the CVD of metal sulfides (see previous article). This paper reports on an investigation by mass fragmentation initiated by electron impact of the vapor phase decomposition of a copper complex in order to clarify the decomposition route and to assess its suitability as a single-source precursor for the MOCVD growth of cuprous sulfide. Reproducible growth of crystalline layers was found and the results suggested a two-step growth mode.
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页码：174 / &
页数：7
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