Single-source MOCVD of Fe/Sn alloy thin films

Two organometallic compounds containing an Fe-Sn bond, CpFe(CO)(2)(SnMe3) (Cp: eta(5)-cyclopentadienyl) and cis-Fe(CO)(4)(SnMe3)(2), have been used as single-source low-pressure CVD precursors to grow Fe/Sn alloy thin films at 300-420 degreesC. Deposited films were characterized by various surface analytical techniques. Electron probe microanalyses show that Fe and Sn elements are evenly distributed in the films. X-ray powder diffraction patterns indicate that these are polycrystalline films. Polycrystalline FeSn films have been successfully prepared from CpFe(CO)(2)(SnMe3) with the deposition rates of 78-175 Angstrom/min. The films composed of FeSn2 phase with a minor constituent of FeSn were obtained by using cis-Fe-(CO)(4)(SnMe3)(2) as precursor and the deposition rates were 130-330 Angstrom/min.