Calculation of drain-to-gate characteristics of single-electron structures

被引：0
|
作者：
Abramov, II [1 ]
Ignatenko, SA [1 ]
Novik, EG [1 ]
机构：
[1] Belarusian State Univ Informat & Radioelect, Minsk 220027, BELARUS
来源：
12TH INTERNATIONAL CONFERENCE - MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS | 2002年
关键词：
D O I：
10.1109/CRMICO.2002.1137317
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The two-dimensional numerical models of one- and two-island single-electron structures are modified to calculate their drain-to-gate characteristics. Comparison with experimental data is given for a transistor.
引用
收藏
页码：466 / 467
页数：2
相关论文
共 50 条
  • [31] Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs
    Pala, N.
    Hu, X.
    Deng, J.
    Yang, J.
    Gaska, R.
    Yang, Z.
    Koudymov, A.
    Shur, M. S.
    Simin, G.
    SOLID-STATE ELECTRONICS, 2008, 52 (08) : 1217 - 1220
  • [32] Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor
    Yu, Yun-Seop
    Son, Seung Hun
    Kim, Hee Tae
    Kim, Yong Gyu
    Oh, Jung Hyun
    Kim, Hanjung
    Hwang, Sung Woo
    Choi, Bum Ho
    Ahn, Doyeol
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2592 - 2595
  • [33] Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor
    Yu, Yun Seop
    Son, Seung Hun
    Kim, Hee Tae
    Kim, Yong Gyu
    Oh, Jung Hyun
    Kim, Hanjung
    Hwang, Sung Woo
    Choi, Bum Ho
    Ahn, Doyeol
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (4 B): : 2592 - 2595
  • [34] Scanning gate microscopy measurements on a superconducting single-electron transistor
    Huefner, M.
    May, C.
    Kicin, S.
    Ensslin, K.
    Ihn, T.
    Hilke, M.
    Suter, K.
    de Rooij, N. F.
    Staufer, U.
    PHYSICAL REVIEW B, 2009, 79 (13)
  • [35] Aluminum single-electron nonvolatile floating gate memory cell
    Appl Phys Lett, 14 (2038):
  • [36] Multigate single-electron transistors and their application to an exclusive-OR gate
    Takahashi, Y
    Fujiwara, A
    Yamazaki, K
    Namatsu, H
    Kurihara, K
    Murase, K
    APPLIED PHYSICS LETTERS, 2000, 76 (05) : 637 - 639
  • [37] Aluminum single-electron nonvolatile floating gate memory cell
    Chen, CD
    Nakamura, Y
    Tsai, JS
    APPLIED PHYSICS LETTERS, 1997, 71 (14) : 2038 - 2040
  • [38] SETUP FOR STUDYING SINGLE-ELECTRON CHARACTERISTICS OF PHOTOMULTIPLIERS
    ANTONOV, VI
    KHOLONDYREV, SV
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1981, 24 (04) : 1024 - 1026
  • [39] Transport characteristics of ferromagnetic single-electron transistors
    Weymann, I
    Barnas, J
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 236 (03): : 651 - 660
  • [40] Silicon single-electron memory using ultrasmall floating gate
    Futatsugi, T
    Nakajima, A
    Nakao, H
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1998, 34 (02): : 142 - 152
12345