Influence of the surface reconstruction on the growth of InP on SrTiO3(001)

被引：11
|
作者：
Cheng, J. [1 ]
Regreny, P. [1 ]
Largeau, L. [2 ]
Patriarche, G. [2 ]
Mauguin, O. [2 ]
Naji, K. [1 ]
Hollinger, G. [1 ]
Saint-Girons, G. [1 ]
机构：
[1] Univ Lyon, Ecole Cent Lyon, INL UMR5270, CNRS, F-69134 Ecully, France
[2] LPN UPR20, CNRS, F-91460 Marcoussis, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 04期
关键词：
Interfaces; Nanostructures; Molecular beam epitaxy; Oxides; Semiconducting III-V materials; SILICON;
D O I：
10.1016/j.jcrysgro.2008.12.014
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A study of the epitaxial growth of InP on SrTiO3(001) (STO) substrates is presented. Reflection high energy electron diffraction (RHEED) and X-ray diffraction experiments evidence the strong influence of STO surface reconstruction on the InP crystalline orientation. When grown on unreconstructed (001) STO surfaces, the InP lattice has its [111] direction perpendicular to the growth plane. When grown on (2 x 1) reconstructed STO surfaces, InP is (001) oriented on the (001) STO substrate. In both cases, at least one [110] InP in-plane direction is aligned to one of the [100] STO direction. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1042 / 1045
页数：4
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