MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN DEEP SUBMICRON MOSFETS WITH THREE 40 nm GATES

被引：0
|
作者：
Zhevnyak, O. G. [1 ]
Borzdov, A. V. [1 ]
Speransky, D. S. [1 ]
Borzdov, V. M. [1 ]
机构：
[1] Belarusian State Univ, Radiophys & Elect Dept, Nezavisimosti Ave 4, Minsk 220030, BELARUS
来源：
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES | 2009年
关键词：
D O I：
10.1142/9789814280365_0135
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
The electrophysical parameters of three-gate short n-channel MOSFETs in comparison with those of conventional single-gate MOSFETs are investigated. By means of Monte Carlo simulation such parameters as, in particular, electron energy and mobility are calculated. It is shown that under certain conditions the values of these parameters may be higher in three-gate MOSFETs.
引用
收藏
页码：573 / +
页数：2
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