Modification of compact bipolar transistor model for dim (Design for Manufacturing) applications

This paper describes the methodology of how to link process information with spice compact models. This is called DIM (Design For Manufacturing). We would like to propose "BJT Physical Model Card" as a solution of DFM design of BiCMOS integrated circuit. This is a SPICE compact model card of bipolar transistors (HiCUM and Gummel-Poon), which utilizes link between model parameters and few process parameters (ex. base width, base doping concentration). Experimental formulae describing the effect of doping concentration on the bulk mobility, bulk resistance and diffusion coefficient are the main heart of this card. This enables circuit engineers perform the reasonable yield analysis prior to the mass production. Two adaptation example will be shown by the use of TOSHIBA's ff=45GHz SiGe BiCMOS technology. Its applicability will be confirmed by the measurement data of single transistors and test circuit (3 stages power amplifier for 2.4GHz application).