High-frequency circuit design oriented compact bipolar transistor modeling with HICUM

被引：24
|
作者：
Schroter, M [1 ]
机构：
[1] Univ Calif San Diego, ECE Dept, La Jolla, CA 92093 USA
[2] Tech Univ Dresden, CEDIC, D-8027 Dresden, Germany
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2005年 / E88C卷 / 06期
关键词：
bipolar transistors; compact modeling; HICUM;
D O I：
10.1093/ietele/e88-c.6.1098
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An overview on the physics and circuit design oriented background of the advanced compact model HICUM is presented. Related topics such as the approach employed for geometry scaling and parameter extraction are briefly discussed. A model hierarchy is introduced, that addresses a variety of requirements encountered during the increasingly complicated task of designing analog and high-frequency circuits.
引用
收藏
页码：1098 / 1113
页数：16
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