On 1/fγ noise in semiconductor devices

被引：26
|
作者：
Lee, JI
Brini, J
Chovet, A
Dimitriadis, CA
机构：
[1] Korea Inst Sci & Technol, Photon Res Ctr, Seoul 130650, South Korea
[2] Enserg, LPCS, CNRS, UMR 5531, F-38016 Grenoble, France
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 12期
关键词：
D O I：
10.1016/S0038-1101(99)00186-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Applying a thermal activation model, we show that the power index gamma of low frequency noise(1/f(gamma)) in semiconductor structures can often be directly related to the ratio of thermal energy and a characteristic energy of the trap distribution, when there is a significant band tail or band bending. Some examples are discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码：2181 / 2183
页数：3
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