Anomalous Photocurrent Characteristic at Negative Gate Bias in IGZO TFT

被引：0

作者：

Inoue, Takayuki ^{[1
]}

Tsubuku, Masashi ^{[1
]}

Takahashi, Masahiro ^{[1
]}

Miyanaga, Akiharu ^{[1
]}

Yamazaki, Shunpei ^{[1
]}

机构：

[1] Semicond Energy Lab Co Ltd, 398 Hase, Atsugi, Kanagawa 2430036, Japan

来源：

IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年

关键词：

HOMOLOGOUS COMPOUNDS; SYSTEM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We conducted light irradiation to IGZO TFT at negative bias applied to its gate and found anomalous photocurrent characteristics. On calculation model, we well reproduced this phenomenon by assuming relaxation time with different length for holes. and electrons. This analytical technique will be effective in discussing levels in the bandgap.

引用

页码：751 / 754

页数：4

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