Empirical model for the distribution of electronic states associated with hydrogenated amorphous silicon

We develop an empirical model for the distribution of electronic states associated with hydrogenated amorphous silicon. This model, which captures both the exponential distributions of tail states and the square-root distributions of band states, is then fit to some hydrogenated amorphous silicon experimental data and the modeling parameters are obtained. The corresponding joint density of states function is then computed, as is the complex component of the dielectric function. A comparison with the results of experiment is performed.