Hydrogen plasma treatment of MoS2 with graphene protection

被引：0
|
作者：
Soman, Anishkumar [1 ]
Burke, Robert A. [2 ]
Li, Qui [1 ]
Valentin, Michael [3 ]
Zakar, Eugene [2 ]
Nsofor, Ugochukwu [1 ,4 ]
Hegedus, Steven [1 ,4 ]
Das, Ujjwal K. [4 ]
Shi, Jianping [5 ]
Zhang, Yanfeng [5 ]
Gu, Tingyi [1 ]
机构：
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
[2] US Army Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20723 USA
[3] Univ Calif Riverside, Dept Chem, Mat Sci & Engn Program, Riverside, CA 92521 USA
[4] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
[5] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
来源：
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2019年
关键词：
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogen plasma treatment can create defects such as sulfur vacancies in single layer MoS2. A single layer graphene's protection can effectively reduce the defects formation as confirmed by Raman spectroscopy. (c) 2019 The Author(s).
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页数：2
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