Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

被引：11

作者：

Kololuoma, T ^{[1
]}

Rantala, JT ^{[1
]}

机构：

[1] VTT Elect, FIN-90571 Oulu, Finland

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 02期

关键词：

D O I：

10.1049/el:20000174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4. 4H(2)O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

引用

页码：172 / 173

页数：2

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