Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

被引:11
|
作者
Kololuoma, T [1 ]
Rantala, JT [1 ]
机构
[1] VTT Elect, FIN-90571 Oulu, Finland
关键词
D O I
10.1049/el:20000174
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4. 4H(2)O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.
引用
收藏
页码:172 / 173
页数:2
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