Raman study of GaAs/Ga1-xAlxAs quantum dots: A dielectric continuum approach

被引：11

作者：

Zhong, Qing-Hu ^{[1
]}

Liu, Cui-Hong ^{[2
]}

机构：

[1] JiaYing Univ, Dept Phys, Meizhou 514015, Guangdong, Peoples R China

[2] Guangzhou Univ, Sch Phys & Elect Engn, Guangzhou Higher Educ Mega Ctr, Guangzhou 510006, Guangdong, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 02期

关键词：

Raman scattering; Optical phonon modes; Quantum dot; VIBRATIONAL-MODES; SCATTERING; PHONONS; SURFACE; ALAS; INAS; LASERS; GAAS;

D O I：

10.1016/j.sse.2008.10.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have presented a theoretical calculation of the scattering intensity for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (10) phonon modes in GaAs/Ga1-xAlxAs quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Frohlich electron-phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Singularities in the Raman spectra for various x are found and interpreted. The numerical results are also compared with that of experiments. (C) 2008 Published by Elsevier Ltd.

引用

页码：134 / 139

页数：6

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