Thermoelectric properties of Sb-doped Mg2Si0.59Sn0.41 solid solutions

被引：5
|
作者：
Du, Zhengliang [1 ]
Cui, Jiaolin [1 ]
Zhu, Tiejun [2 ]
Zhao, Xinbing [2 ]
机构：
[1] Ningbo Univ Technol, Inst Mat Engn, Ningbo 315016, Zhejiang, Peoples R China
[2] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 11期
基金：
中国国家自然科学基金;
关键词：
magnesium silicides; magnesium vacancy; metals and alloys; thermoelectric properties; MG2SI; MG;
D O I：
10.1002/pssa.201329185
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
N-type Mg2Si0.59-xSn0.41Sbx (0 <= x <= 0.01) solid solutions were prepared by melting elemental metals in sealed tantalum tubes followed by hot pressing. The electrical conductivity, Seebeck coefficient, and thermal conductivity have been measured as a function of temperature from 300 to 770 K. The electron effective mass and electron concentration increase with increasing Sb doping amount. The Sb doping enhances the concentration of Mg vacancies, which reduces the electron concentration. The maximum dimensionless figure of merit is 0.68 at 693K for the x 0.005 sample. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2359 / 2363
页数：5
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