Bismuth iron garnet Bi3Fe5O12: A room temperature magnetoelectric material

被引：29

作者：

Popova, Elena ^{[1
]}

Shengelaya, Alexander ^{[2
,3
]}

Daraselia, Dimitri ^{[2
]}

Japaridze, David ^{[2
]}

Cherifi-Hertel, Salia ^{[4
]}

Bocher, Laura ^{[5
]}

Gloter, Alexandre ^{[5
]}

Stephan, Odile ^{[5
]}

Dumont, Yves ^{[1
]}

Keller, Niels ^{[1
]}

机构：

[1] Univ Paris Saclay, CNRS UVSQ, Grp Etud Matiere Condensee GEMaC, F-78035 Versailles, France

[2] Tbilisi State Univ, Dept Phys, Tbilisi 0128, Georgia

[3] Ivane Javakhishvili Tbilisi State Univ, Andronikashvili Inst Phys, Tbilisi 0177, Georgia

[4] Univ Strasbourg, CNRS, Inst Phys & Chim Mat Strasbourg, UMR 7504, F-67000 Strasbourg, France

[5] Univ Paris Sud, Univ Paris Saclay, CNRS, LPS, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 14期

基金：

美国国家科学基金会;

关键词：

DOMAIN-WALLS; FILMS; YIG;

D O I：

10.1063/1.4979826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility to control the magnetic properties of a material with an electric field at room temperature via magnetoelectric (ME) coupling is highly desirable for modern applications. Here, we report the unambiguous observation of ME coupling above 300K that is linear with respect to the electric field in a bismuth iron garnet (BIG). The ferromagnetic resonance technique with electric field modulation was used to quantify ME coupling in Bi3Fe5O12 thin films and patterned structures grown on garnet substrates. The measured coupling value is comparable with that observed for prototypal magnetoelectric Cr2O3. On the basis of our experimental results, the strength of this linear ME coupling is directly linked to the presence of bismuth ions inducing strong spin orbit coupling and to the appearance of local magnetic inhomogeneities related to the magnetic domain structure. The unprecedented combination of magnetic, optical, and magnetoelectrical properties in the BIG is expected to trigger significant interest for technological applications as well as for theoretical studies. Published by AIP Publishing.

引用

页数：5

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