Floating cast method to realize high-quality Si bulk multicrystals for solar cells

被引:30
|
作者
Nose, Yoshitaro [1 ]
Takahashi, Isao [1 ]
Pan, Wugen [1 ]
Usami, Noritaka [1 ]
Fujiwara, Kozo [1 ]
Nakajima, Kazuo [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
关键词
Solidification; Growth from melt; Semiconducting silicon; Solar cells; GRAIN-BOUNDARIES; SILICON; GROWTH;
D O I
10.1016/j.jcrysgro.2008.10.098
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report on proof-of-concept experiments to demonstrate the advantages of "floating cast method" as a growth method to realize high-quality Si bulk multicrystals for solar cells. The fundamental concept is to use the top center of the melt as the nucleation site and to avoid contact between the crystal and the inner wall of the crucible during crystal growth. In contrast to the conventional casting method to start with inhomogeneous nucleation at the bottom of the crucible, the size of crystal grains is expected to become larger by limiting the number of nuclei. In addition, minimization of the contact of the crystal with the inner wall of the crucible is considered to result in low contamination of diffused impurities from the lining material as well as fewer defects by decreasing residual strain. These features are confirmed by comparing properties of crystals grown by the floating cast and the conventional methods. Furthermore, relative increase of the conversion efficiency of solar cells and the improvement of the material yield applicable to solar cells are presented, which certifies the advantage of the floating cast method. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:228 / 231
页数:4
相关论文
共 50 条
  • [41] Hydrogen plasma treatment for improving bulk passivation quality of c-Si solar cells
    Rattanapan, Suttirat
    Yamamoto, Hiroshi
    Miyajima, Shinsuke
    Sato, Takehiko
    Konagai, Makoto
    CURRENT APPLIED PHYSICS, 2010, 10 : S215 - S217
  • [42] QUICKIE METHOD FOR HIGH-QUALITY GRAPHENE
    不详
    CHEMICAL & ENGINEERING NEWS, 2015, 93 (32) : 48 - 49
  • [43] Preparation of High-Quality Poly-Si Films by a Solid Phase Crystallizing Method
    姚若河
    张晓东
    Plasma Science and Technology, 2002, (03) : 1319 - 1322
  • [44] HIGH-QUALITY A-SI FILMS PREPARED BY THE DIRECT PHOTO-CVD METHOD
    NAKANO, S
    WAKISAKA, K
    KAMEDA, M
    ISOMURA, M
    MATSUYAMA, T
    NAKAMURA, N
    TSUDA, S
    OHNISHI, M
    KUWANO, Y
    AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 417 - 422
  • [45] Greener method for high-quality polypyrrole
    Dias, H. V. Rasika
    Fianchini, Mauro
    Rajapakse, R. M. Gamini
    POLYMER, 2006, 47 (21) : 7349 - 7354
  • [46] High-quality MAPbI3 film prepared by drip-pressing method in the air for perovskite solar cells
    Sun, Qinjun
    Fan, Xueting
    Han, Shuai
    Lv, Hongyan
    Zhao, Jian
    Gao, Liyan
    Hao, Yuying
    ORGANIC ELECTRONICS, 2023, 121
  • [47] Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells
    Nakajima, K
    Usami, N
    Fujiwara, K
    Murakami, Y
    Ujihara, T
    Sazaki, G
    Shishido, T
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 73 (03) : 305 - 320
  • [48] Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation
    Chou, Kang Wei
    Yan, Buyi
    Li, Ruipeng
    Li, Er Qiang
    Zhao, Kui
    Anjum, Dalaver H.
    Alvarez, Steven
    Gassaway, Robert
    Biocca, Alan
    Thoroddsen, Sigurdur T.
    Hexemer, Alexander
    Amassian, Aram
    ADVANCED MATERIALS, 2013, 25 (13) : 1923 - 1929
  • [49] High-quality thin film GaAs bonded to Si using SeS2 -: A new approach for high-efficiency tandem solar cells
    Arokiaraj, J
    Okui, H
    Taguchi, H
    Soga, T
    Jimbo, T
    Umeno, M
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 607 - 614
  • [50] GROWTH AND CHARACTERIZATION OF HIGH-QUALITY LPEE GAAS BULK CRYSTALS
    BRYSKIEWICZ, T
    BUGAJSKI, M
    LAGOWSKI, J
    GATOS, HC
    JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) : 136 - 141