Top-down fabricated tapered GaAs nanowires with sacrificial etching of the mask

被引：7

作者：

Dhindsa, Navneet

Saini, Simarjeet Singh ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, 200 Univ Ave W, Waterloo, ON N2L 3G1, Canada

来源：

NANOTECHNOLOGY | 2017年 / 28卷 / 23期

关键词：

gallium arsenide; tapered nanowires; broadband absorption; top-down approach; SILICON NANOWIRE; SOLAR-CELL; ARRAYS; ABSORPTION; PHOTODETECTORS;

D O I：

10.1088/1361-6528/aa6fe9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A novel fabrication method using controlled sacrificial etching of the mask is utilized to fabricate tapered vertical GaAs nanowire arrays. Experimental measurements of the absorption characteristics show that the tapered nanowires absorb over a broadband range as compared to cylindrical ones. The broadband characterization is verified by using optical modeling and results from improved coupling of the nanowires due to distinct radial HE modes being excited separately in the taper and the cylindrical part. The absorption is found to be more broadband as compared to conical nanowires studied so far.

引用

页数：9

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