W-Band Miniaturized Multistage MMIC Low-Noise Amplifier

被引：1
|
作者：
Li, Linpu [1 ,2 ]
Qian, Rong [1 ]
Sun, Hao [1 ]
Sun, Xiaowei [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai, Peoples R China
[2] Univ Chinese Acad Sci, Key Lab Terahertz Solid State Technol, Beijing, Peoples R China
来源：
2019 CROSS STRAIT QUAD-REGIONAL RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSQRWC) | 2019年
基金：
中国国家自然科学基金;
关键词：
Millimeter-wave circuit; W-band; low-noise amplifier (LNA); miniaturized chip size;
D O I：
10.1109/csqrwc.2019.8799329
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a W-band miniaturized multistage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) is proposed, which is fabricated using a standard commercial 100nm GaAs pseudomorphic high electron-mobility transistor (pHEMT) technology. The noise match for first stage and inter-stage mismatch technology is adopted to realize a good noise figure and relatively flat gain response simultaneously. Two shunt match stub topology is used to miniaturize the chip size. For the purpose of verification, a prototype is designed, fabricated and measured. The fabricated low-noise amplifier achieves a flat gain of 22 +/- 0.4dB and a noise figure of about 5dB from 76GHz to 92GHz. The main size of the chip is only 0.82mm*0.62mm.
引用
收藏
页数：2
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