W-Band Miniaturized Multistage MMIC Low-Noise Amplifier

In this paper, a W-band miniaturized multistage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) is proposed, which is fabricated using a standard commercial 100nm GaAs pseudomorphic high electron-mobility transistor (pHEMT) technology. The noise match for first stage and inter-stage mismatch technology is adopted to realize a good noise figure and relatively flat gain response simultaneously. Two shunt match stub topology is used to miniaturize the chip size. For the purpose of verification, a prototype is designed, fabricated and measured. The fabricated low-noise amplifier achieves a flat gain of 22 +/- 0.4dB and a noise figure of about 5dB from 76GHz to 92GHz. The main size of the chip is only 0.82mm*0.62mm.