Fabrication of p-Channel Amorphous Tin Oxide Thin-Film Transistors Using a Thermal Evaporation Process

被引：28

作者：

Lee, Ho-Nyeon ^{[1
]}

Song, Byeong-Jun ^{[2
]}

Park, Jae Chul ^{[3
]}

机构：

[1] Soonchunhyang Univ, Dept Display & Elect Informat Engn, Asan 336745, South Korea

[2] Soonchunhyang Univ, Dept Elect & Robot Engn, Asan 336745, South Korea

[3] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2014年 / 10卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Thin-film transistors (TFTs); semiconductor device fabrication; tin compounds; ELECTRONIC-STRUCTURES; SEMICONDUCTOR; MOBILITY; OXYGEN;

D O I：

10.1109/JDT.2014.2298862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated. A vacuum thermal evaporation method with an SnO powder source was used to deposit the tin-oxide active layer. Thermal annealing in N-2 and oxygen plasma treatment were used as post-deposition treatments to obtain p-channel switching capabilities from the tin-oxide active layer. We have achieved a field effect mobility of 5.59 cm(2)V(-1)s(-1) with these TFTs. With their high mobility and low-cost fabrication process that is applicable to large-sized devices, they represent an advance toward practical oxide semiconductor technology.

引用

页码：288 / 292

页数：5

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