Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy

被引:18
|
作者
Chu, Wen-Huei [1 ]
Chiang, Hsin-Wei [1 ]
Liu, Chuan-Pu [1 ,2 ]
Lai, Yi-Feng [1 ]
Hsu, Kuang-Yuan [1 ]
Chung, Hung-Chin [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micronano Sci & Technol, Tainan 701, Taiwan
关键词
aluminium compounds; atomic force microscopy; chemical vapour deposition; crystal microstructure; electrical resistivity; gallium compounds; III-V semiconductors; nanofabrication; nanowires; semiconductor quantum wires; transmission electron microscopy; tunnelling; wide band gap semiconductors; THREADING-EDGE; DISLOCATIONS; SAPPHIRE;
D O I
10.1063/1.3130728
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on negative differential resistance (NDR) from individual GaN nanowires prepared without catalysts by thermal chemical vapor deposition. Conductive atomic force microscopy was used to characterize the electron transport behavior and transmission electron microscopy was employed to characterize the microstructure of the GaN nanowires. The current-voltage curve exhibits two clear NDR regions in the forward bias. The defect assisted inelastic tunneling process resulting in the NDR behavior and the related mechanism for energy band diagram is proposed and discussed.
引用
收藏
页数:3
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