Design and Development of the MEMS-Based High-g Acceleration Threshold Switch

被引:14
|
作者
Singh, Virender [1 ]
Kumar, Vijay [2 ]
Saini, Ashish [2 ]
Khosla, P. K. [2 ,3 ]
Mishra, Sunita [1 ,4 ]
机构
[1] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
[2] Def Res & Dev Org DRDO, Terminal Ballist Res Lab, Chandigarh 160030, India
[3] Ctr Dev Adv Comp C DAC, Mohali 160071, India
[4] CSIR Cent Sci Instruments Org CSIR CSIO, Chandigarh 160030, India
关键词
Deep reactive ion etching (DRIE); high-g acceleration threshold switch; micro-electromechanical system (MEMS); single degree of freedom system (SDOF);
D O I
10.1109/JMEMS.2020.3032833
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper describes the design, simulation and fabrication of a micro-electromechanical system (MEMS) based acceleration threshold switch with an independent angled latching mechanism. The switch is designed to operate in critical applications wherein power cannot be applied. It is a passive device that does not require power for retention of its mechanical state and mechanical memory. The switch consists of a serpentine spring-mass system with an independent angled latching mechanism and multiple contacts. Stoppers were used to limit displacement in the lateral direction and provide a guided path in the line of action to the proof mass. A transient analysis was performed to study non-linear behaviour of the switch. The latching threshold value was determined analytically based on the geometry of the switch. The switch was fabricated on an SOI (silicon-on-insulator) wafer having 25 mu m thick device layer and 400 mu m handle wafer. The switch was given a static mechanical shock of 3500g to observe its behaviour under shock. Contact resistance of the switch was approximately 2 Omega in the ON position and more than 100 M Omega in OFF position. The theoretical and simulated results were in good agreement with the experimental results.
引用
收藏
页码:24 / 31
页数:8
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