Fabrication of single-crystal Si microstructures by anodization

被引：19
|
作者：
Higa, K
Asano, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12B期
关键词：
anodization; porous Si; Si microstructure; micromachining; microcantilever; piezoresistive gauge;
D O I：
10.1143/JJAP.35.6648
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.
引用
收藏
页码：6648 / 6651
页数：4
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