Formation of CuInSe2 thin films on flexible substrates by electrodeposition (ED) technique

被引:64
|
作者
Huang, CJ [1 ]
Meen, TH [1 ]
Lai, MY [1 ]
Chen, WR [1 ]
机构
[1] So Taiwan Univ Technol, Dept Elect Engn, Tainan 70101, Taiwan
关键词
electrodeposition (ED); CuInSe2 (CIS); flexible; nitrogen (N-2);
D O I
10.1016/j.solmat.2003.12.008
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This work reveals the formation of electrodeposition (ED) of CuInSe2 (CIS) film on flexible substrate. Ternary compounds were co-deposited on Au coated plastic substrate from an aqueous acidic solution containing 1 mM CuCl2, 5 mM InCl3 and 1 mM SeO2 adjusted to pH = 1.65. It was found that the film stoichiometry improves when the growth solution consisted of I M triethanolamine (TEA) and 0.1 M Na-citrate. The optimal ED-CIS film was obtained after annealing at 150degreesC for 1 h in a nitrogen (N-2) atmosphere. Optical absorption study showed that the energy gap of the annealed material is 1.18eV. Good and reliable quality ED-CIS film was grown in this research with the potential use in fabricating flexible solar cells. This was supported by various analytical techniques, including energy dispersive spectroscopy (EDS), X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM), ultraviolet/visible spectroscopy, Fourier transform infrared spectrometer (FTIR) and photoelectrochemical (PEC) characterization. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:553 / 565
页数:13
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