Evidence of nonuniform carrier distribution in multiple quantum well lasers

被引：40

作者：

Yamazaki, H ^{[1
]}

Tomita, A ^{[1
]}

Yamaguchi, M ^{[1
]}

Sasaki, Y ^{[1
]}

机构：

[1] NEC CORP LTD,ULSI DEVICE DEV LABS,OTSU,SHIGA 520,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 06期

关键词：

D O I：

10.1063/1.119640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier distribution in multiple quantum well (MQW) lasers is studied by measuring laser wavelength. The MQW is designed to contain wells with different thicknesses. The MQW laser wavelength agreed with the transition wavelength of the wells near the p-clad layer at room temperature. At low temperatures, however, the laser wavelength corresponded to the thicker wells. The results imply that hole localization takes place at room temperature but disappears at low temperatures. This shows the invalidity of the conventional capture/escape model. The importance of the mean free path of unbound carriers is pointed out. (C) 1997 American Institute of Physics.

引用

页码：767 / 769

页数：3

共 50 条

[21] Carrier dynamics of quantum well bistable lasers
Madhan, MG
Gunasekaran, N
FIBER AND INTEGRATED OPTICS, 2001, 20 (05) : 525 - 534
[22] Carrier Leakage in GaInNAsSb Quantum Well Lasers
Ferguson, J. W.
Smowton, P. M.
Blood, P.
Gupta, J. A.
Aers, G. C.
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 2147 - +
[23] Simulating carrier dynamics in quantum well lasers
Grupen, M
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV, 1996, 2693 : 374 - 385
[24] Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
Czotscher, K
Weisser, S
Larkins, EC
Fleissner, J
Ralston, JD
Schonfelder, A
Rosenzweig, J
Esquivias, I
APPLIED PHYSICS LETTERS, 1996, 69 (21) : 3158 - 3160
[25] Electron-determined nonuniform carrier distribution among InGaAsP multiple quantum wells
Lin, CF
Wu, BR
Laih, LW
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9A): : 5557 - 5558
[26] The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
Zhu, J. H.
Zhang, S. M.
Wang, H.
Zhao, D. G.
Zhu, J. J.
Liu, Z. S.
Jiang, D. S.
Qiu, Y. X.
Yang, H.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)
[27] TRANSIENT CARRIER DYNAMICS AND PHOTON-ASSISTED TRANSPORT IN MULTIPLE-QUANTUM-WELL LASERS
TESSLER, N
EISENSTEIN, G
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (03) : 291 - 293
[28] Influence of nonuniform carrier distribution on the polarization dependence of modal gain in multiquantum-well lasers and semiconductor optical amplifiers
Ban, DY
Sargent, EH
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (09) : 1081 - 1088
[29] CARRIER-CARRIER SCATTERING INDUCED CAPTURE IN QUANTUM-WELL LASERS
BLOM, PWM
HAVERKORT, JEM
VANHALL, PJ
WOLTER, JH
APPLIED PHYSICS LETTERS, 1993, 62 (13) : 1490 - 1492
[30] ON CARRIER INJECTION AND GAIN DYNAMICS IN QUANTUM-WELL LASERS
TESSLER, N
EISENSTEIN, G
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1586 - 1595

← 1 2 3 4 5 →