Evidence of nonuniform carrier distribution in multiple quantum well lasers

被引：40
|
作者：
Yamazaki, H [1 ]
Tomita, A [1 ]
Yamaguchi, M [1 ]
Sasaki, Y [1 ]
机构：
[1] NEC CORP LTD,ULSI DEVICE DEV LABS,OTSU,SHIGA 520,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 06期
关键词：
D O I：
10.1063/1.119640
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carrier distribution in multiple quantum well (MQW) lasers is studied by measuring laser wavelength. The MQW is designed to contain wells with different thicknesses. The MQW laser wavelength agreed with the transition wavelength of the wells near the p-clad layer at room temperature. At low temperatures, however, the laser wavelength corresponded to the thicker wells. The results imply that hole localization takes place at room temperature but disappears at low temperatures. This shows the invalidity of the conventional capture/escape model. The importance of the mean free path of unbound carriers is pointed out. (C) 1997 American Institute of Physics.
引用
收藏
页码：767 / 769
页数：3
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