Coulomb gap energy in amorphous SixGe1-x films

被引：0
|
作者：
Aoki, N [1 ]
Nara, K [1 ]
Ochiai, Y [1 ]
机构：
[1] Chiba Univ, Dept Mat Sci, Chiba 2638522, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2000年 / 218卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-3951(200003)218:1<5::AID-PSSB5>3.0.CO;2-J
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have measured the low temperature resistance in amorphous SixGe1-x alloy films. Fitting to the theoretical results, we found two kinds of transport regime in the low temperature transport, variable range hopping type (T-1/4) and Coulomb gap type (T-1/2), and can determine the crossover temperature. The crossover temperature clearly depends on the ratio of the alloy composition.
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页码：5 / 9
页数：5
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