Threshold current density of 1.3-μm GaAsSbN/GaAs quantum-well lasers

被引：0
|
作者：
Park, Seoung-Hwan [1 ]
Kim, Hwa-Min [1 ]
Kim, Jong-Jae [1 ]
机构：
[1] Catholic Univ Daegu, Dept Phys & Semicond Sci, Gyeongbuk 712702, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 49卷 / 02期
关键词：
type II; GaAsSb; quantum well; diode laser; GaInAs; self-consistent;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The threshold current density of a GaAsSbN/GaAs quantum well (QW) structure is investigated using the multiband effective mass theory and the non-Markovian gain model. This is compared with that of a type-II GaAsSb/GaAs QW structure for a self-consistent method. The GaAsSbN/GaAs QW structure is found to have a larger optical gain than the GaAsSb/GaAs QW structure. This can be explained by the fact that the former has a larger optical matrix element and an improved quasi-Fermi-level separation (Delta E-fc + Delta E-fv) than the latter. The improvement in the total quasi-Fermi-level separation of the GaAsSbN/GaAs QW structure is mainly attributed to a larger energy spacing in the conduction band. The GaAsSbN/GaAs QW structure shows a significantly smaller threshold current density compared to that of the GaAsSb/GaAs QW structure because the GaAsSbN/GaAs QW structure has a much smaller threshold carrier density than the GaAsSb/GaAs QW structure.
引用
收藏
页码：660 / 664
页数：5
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